Chemically Amplified Glass Precursor Resist

Calibration of Chemically Amplified Resist Models

Determining Free Volume Changes During the PEB and PAB of a Chemically Amplified Resist

Chemically amplified resists provide some trade-off between resolution and amplification. While it is necessary for a single photogenerated acid to be mobile enough to cause several deprotection reactions, this inevitably leads to some linewidth spread. An acid molecule mobile enough to travel to several reaction sites is also mobile enough to move into unexposed regions of the resist. In order...

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...

Effects of photoacid generator incorporation into the polymer main chain on 193nm chemically amplified resist behavior and lithographic performance

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Laser interferometric nanolithography using a new positive chemical amplified resist

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